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NTD20N03L27 Технические параметры

ON Semiconductor  NTD20N03L27 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка ON Semiconductor
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 20A Ta
Drive Voltage (Max Rds On, Min Rds On) 4V 5V
Number of Elements 1 Element
Power Dissipation (Max) 1.75W Ta 74W Tc
Turn Off Delay Time 38 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2007
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn80Pb20)
Additional Feature AVALANCHE RATED
Voltage - Rated DC 30V
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 235
Reach Compliance Code not_compliant
Current Rating 20A
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 74W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 27m Ω @ 10A, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1260pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 18.9nC @ 10V
Rise Time 137ns
Vgs (Max) ±20V
Fall Time (Typ) 31 ns
Continuous Drain Current (ID) 20A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.031Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 60A
Avalanche Energy Rating (Eas) 288 mJ
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

NTD20N03L27 Документы

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