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ON Semiconductor NTD20P06L-001 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ON Semiconductor | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | |
| Number of Pins | 3Pins | |
| Current - Continuous Drain (Id) @ 25℃ | 15.5A Ta | |
| Drive Voltage (Max Rds On, Min Rds On) | 5V | |
| Power Dissipation (Max) | 65W Tc | |
| Turn Off Delay Time | 28 ns | |
| Operating Temperature | -55°C~175°C TJ | |
| Packaging | Tube | |
| Published | 2005 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Voltage - Rated DC | -60V | |
| Current Rating | -15A |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Element Configuration | Single | |
| Power Dissipation | 65W | |
| FET Type | P-Channel | |
| Rds On (Max) @ Id, Vgs | 150m Ω @ 7.5A, 5V | |
| Vgs(th) (Max) @ Id | 2V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 1190pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 26nC @ 5V | |
| Rise Time | 90ns | |
| Drain to Source Voltage (Vdss) | 60V | |
| Vgs (Max) | ±20V | |
| Fall Time (Typ) | 70 ns | |
| Continuous Drain Current (ID) | 15.5A | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain to Source Breakdown Voltage | -60V | |
| RoHS Status | Non-RoHS Compliant | |
| Lead Free | Contains Lead |