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NTD4805NT4G Технические параметры

ON Semiconductor  NTD4805NT4G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Factory Lead Time 9 Weeks
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 4Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 12.7A Ta 95A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 11.5V
Number of Elements 1 Element
Power Dissipation (Max) 1.41W Ta 79W Tc
Turn Off Delay Time 20.8 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Resistance 5MOhm
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Pin Count 4
Свойство продукта Значение свойства
JESD-30 Code R-PSSO-G2
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.24W
Case Connection DRAIN
Turn On Delay Time 17.2 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2865pF @ 12V
Gate Charge (Qg) (Max) @ Vgs 48nC @ 11.5V
Rise Time 20.3ns
Vgs (Max) ±20V
Fall Time (Typ) 8 ns
Continuous Drain Current (ID) 88A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 95A
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 288 mJ
Height 2.38mm
Length 6.73mm
Width 6.22mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

NTD4805NT4G Документы

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