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NTD4854N-1G Технические параметры

ON Semiconductor  NTD4854N-1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка ON Semiconductor
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 day ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 4Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 15.7A Ta 128A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 1.43W Ta 93.75W Tc
Turn Off Delay Time 41 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Свойство продукта Значение свойства
Pin Count 4
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.6m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4600pF @ 12V
Gate Charge (Qg) (Max) @ Vgs 49.2nC @ 4.5V
Rise Time 17.6ns
Vgs (Max) ±20V
Fall Time (Typ) 8.5 ns
Continuous Drain Current (ID) 128A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 15.7A
Drain to Source Breakdown Voltage 25V
Pulsed Drain Current-Max (IDM) 225A
Avalanche Energy Rating (Eas) 338 mJ
RoHS Status RoHS Compliant
Lead Free Lead Free

NTD4854N-1G Документы

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