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NTD4963N-1G Технические параметры
ON Semiconductor NTD4963N-1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ON Semiconductor | |
| Lifecycle Status | Obsolete (Last Updated: 2 years ago) | |
| Surface Mount | NO | |
| Number of Pins | 4Pins | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Schedule B | 8541290080, 8541290080/8541290080/8541290080/8541290080/8541290080 | |
| Number of Elements | 1 Element | |
| Manufacturer Lifecycle Status | OBSOLETE (Last Updated: 2 years ago) | |
| RoHS | Compliant | |
| Turn Off Delay Time | 14 ns | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, CASE369AC-01, IPAK-3 | |
| Package Style | IN-LINE | |
| Moisture Sensitivity Levels | 1 | |
| Package Body Material | PLASTIC/EPOXY | |
| Manufacturer Package Code | 369 | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 175 °C | |
| Manufacturer Part Number | NTD4963N-1G | |
| Package Shape | RECTANGULAR | |
| Manufacturer | ON Semiconductor | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | ON SEMICONDUCTOR | |
| Risk Rank | 5.63 | |
| Drain Current-Max (ID) | 8.1 A | |
| JESD-609 Code | e3 | |
| Pbfree Code | Yes | |
| ECCN Code | EAR99 | |
| Resistance | 9.6 MΩ | |
| Terminal Finish | Tin (Sn) | |
| Max Operating Temperature | 175 °C | |
| Min Operating Temperature | -55 °C | |
| Subcategory | FET General Purpose Powers | |
| Max Power Dissipation | 1.1 W |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Position | SINGLE | |
| Terminal Form | THROUGH-HOLE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | not_compliant | |
| Pin Count | 4 | |
| JESD-30 Code | R-PSIP-T3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 35.7 W | |
| Case Connection | DRAIN | |
| Turn On Delay Time | 12 ns | |
| Transistor Application | SWITCHING | |
| Rise Time | 20 ns | |
| Drain to Source Voltage (Vdss) | 30 V | |
| Polarity/Channel Type | N-CHANNEL | |
| Continuous Drain Current (ID) | 10 A | |
| Gate to Source Voltage (Vgs) | 20 V | |
| Drain Current-Max (Abs) (ID) | 44 A | |
| Drain-source On Resistance-Max | 0.016 Ω | |
| Drain to Source Breakdown Voltage | 30 V | |
| Pulsed Drain Current-Max (IDM) | 132 A | |
| Input Capacitance | 1.035 nF | |
| DS Breakdown Voltage-Min | 30 V | |
| Avalanche Energy Rating (Eas) | 33.8 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 35.7 W | |
| Drain to Source Resistance | 13.6 mΩ | |
| Rds On Max | 9.6 mΩ | |
| Width | 2.38 mm | |
| Height | 7.49 mm | |
| Length | 6.73 mm | |
| Radiation Hardening | No | |
| Lead Free | Lead Free |
NTD4963N-1G Документы
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