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NTD5406NG Технические параметры

ON Semiconductor  NTD5406NG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка ON Semiconductor
Lifecycle Status OBSOLETE (Last Updated: 1 week ago)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 12.2A Ta 70A Tc
Drive Voltage (Max Rds On, Min Rds On) 5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 3W Ta 100W Tc
Turn Off Delay Time 20 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 40V
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Current Rating 70A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 100W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2500pF @ 32V
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Rise Time 147ns
Vgs (Max) ±20V
Fall Time (Typ) 29 ns
Continuous Drain Current (ID) 70A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.01Ohm
Drain to Source Breakdown Voltage 40V
Pulsed Drain Current-Max (IDM) 150A
Avalanche Energy Rating (Eas) 450 mJ
RoHS Status RoHS Compliant
Lead Free Lead Free

NTD5406NG Документы

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