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NTD5807NT4G Технические параметры

ON Semiconductor  NTD5807NT4G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка ON Semiconductor
Lifecycle Status LAST SHIPMENTS (Last Updated: 5 days ago)
Surface Mount YES
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type Surface Mount
Number of Pins 4Pins
Transistor Element Material SILICON
Power Dissipation (Max) 33W Tc
Turn Off Delay Time 15.6 ns
Number of Elements 1 Element
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Current - Continuous Drain (Id) @ 25℃ 23A Tc
Published 2008
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Свойство продукта Значение свойства
Pin Count 4
JESD-30 Code R-PSSO-G2
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 33W
Case Connection DRAIN
Turn On Delay Time 11.2 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 31m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 603pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Rise Time 20.4ns
Vgs (Max) ±20V
Fall Time (Typ) 2 ns
Continuous Drain Current (ID) 23A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
Width 6.22mm
Length 6.73mm
Height 2.38mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

NTD5807NT4G Документы

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