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NTD5862N-1G Технические параметры

ON Semiconductor  NTD5862N-1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка ON Semiconductor
Lifecycle Status LAST SHIPMENTS (Last Updated: 22 hours ago)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount NO
Number of Pins 4Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 98A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 115W Tc
Turn Off Delay Time 35 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Pin Count 4
JESD-30 Code R-PSIP-T3
Свойство продукта Значение свойства
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 115W
Case Connection DRAIN
Turn On Delay Time 18 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5.7m Ω @ 45A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 82nC @ 10V
Rise Time 70ns
Vgs (Max) ±20V
Fall Time (Typ) 60 ns
Continuous Drain Current (ID) 98A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 90A
Drain-source On Resistance-Max 0.0057Ohm
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 335A
Avalanche Energy Rating (Eas) 205 mJ
Height 2.38mm
Length 6.73mm
Width 6.22mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

NTD5862N-1G Документы

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