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NTD60N02R-1G Технические параметры

ON Semiconductor  NTD60N02R-1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка ON Semiconductor
Lifecycle Status LAST SHIPMENTS (Last Updated: 3 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 4Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 8.5A Ta 32A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 1.25W Ta 58W Tc
Turn Off Delay Time 19 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2004
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 25V
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Current Rating 62A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.87W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10.5m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1330pF @ 20V
Gate Charge (Qg) (Max) @ Vgs 14nC @ 4.5V
Rise Time 33ns
Vgs (Max) ±20V
Fall Time (Typ) 33 ns
Continuous Drain Current (ID) 32A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0105Ohm
Drain to Source Breakdown Voltage 25V
Avalanche Energy Rating (Eas) 60 mJ
RoHS Status RoHS Compliant
Lead Free Lead Free

NTD60N02R-1G Документы

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