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NTD65N03R-35G Технические параметры
ON Semiconductor NTD65N03R-35G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ON Semiconductor | |
| Lifecycle Status | Obsolete (Last Updated: 2 years ago) | |
| Package / Case | TO-251-3 Stub Leads, IPak | |
| Mounting Type | Through Hole | |
| Surface Mount | NO | |
| Number of Pins | 3Pins | |
| Supplier Device Package | I-Pak | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Voltage Rating (DC) | 25 V | |
| Manufacturer Lifecycle Status | OBSOLETE (Last Updated: 2 years ago) | |
| RoHS | Compliant | |
| Turn Off Delay Time | 20.3 ns | |
| Product Status | Obsolete | |
| Mfr | onsemi | |
| Current - Continuous Drain (Id) @ 25℃ | 65A (Tc) | |
| Base Product Number | NTD65 | |
| Package | Tube | |
| Package Description | LEAD FREE, CASE 369D-01, DPAK-3 | |
| Package Style | IN-LINE | |
| Moisture Sensitivity Levels | NOT SPECIFIED | |
| Package Body Material | PLASTIC/EPOXY | |
| Manufacturer Package Code | CASE 369D-01 | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Rohs Code | Yes | |
| Manufacturer Part Number | NTD65N03R-35G | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Rochester Electronics LLC | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
| Risk Rank | 5.3 | |
| Drain Current-Max (ID) | 32 A | |
| Series | - | |
| JESD-609 Code | e3 | |
| Pbfree Code | Yes |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Finish | MATTE TIN | |
| Max Operating Temperature | 150 °C | |
| Min Operating Temperature | -55 °C | |
| Technology | MOSFET (Metal Oxide) | |
| Terminal Position | SINGLE | |
| Terminal Form | THROUGH-HOLE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown | |
| Current Rating | 65 A | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSIP-T3 | |
| Qualification Status | COMMERCIAL | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 50 W | |
| Case Connection | DRAIN | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 8.4mOhm @ 30A, 10V | |
| Vgs(th) (Max) @ Id | 2V @ 250µA | |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 20 V | |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 5 V | |
| Drain to Source Voltage (Vdss) | 25 V | |
| Polarity/Channel Type | N-CHANNEL | |
| Continuous Drain Current (ID) | 65 A | |
| Gate to Source Voltage (Vgs) | 20 V | |
| Drain-source On Resistance-Max | 0.0146 Ω | |
| Drain to Source Breakdown Voltage | 25 V | |
| Pulsed Drain Current-Max (IDM) | 130 A | |
| Input Capacitance | 1.4 nF | |
| DS Breakdown Voltage-Min | 25 V | |
| Avalanche Energy Rating (Eas) | 71.7 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | - | |
| Drain to Source Resistance | 9.7 mΩ | |
| Lead Free | Lead Free |
NTD65N03R-35G Документы
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