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NTD70N03R Технические параметры

ON Semiconductor  NTD70N03R technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка ON Semiconductor
Lifecycle Status OBSOLETE (Last Updated: 3 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 4Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 10A Ta 32A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 1.36W Ta 62.5W Tc
Turn Off Delay Time 18.4 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
Terminal Finish Tin/Lead (Sn80Pb20)
Voltage - Rated DC 25V
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Свойство продукта Значение свойства
Current Rating 72A
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.87W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1333pF @ 20V
Gate Charge (Qg) (Max) @ Vgs 13.2nC @ 5V
Rise Time 1.3ns
Vgs (Max) ±20V
Fall Time (Typ) 1.3 ns
Continuous Drain Current (ID) 32A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 62.8A
Drain-source On Resistance-Max 0.013Ohm
Drain to Source Breakdown Voltage 25V
Avalanche Energy Rating (Eas) 71.7 mJ
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

NTD70N03R Документы

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