[email protected]

Локаль

Язык

  • English
  • русский

Валюта

  • CNY-¥
  • RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
Классификация Марка Марка О Anli Запрос цены
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
[email protected]

NTE4151PT1G Технические параметры

ON Semiconductor  NTE4151PT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Factory Lead Time 8 Weeks
Mounting Type Surface Mount
Package / Case SC-89, SOT-490
Surface Mount YES
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 760mA Tj
Drive Voltage (Max Rds On, Min Rds On) 1.8V 4.5V
Number of Elements 1 Element
Power Dissipation (Max) 313mW Tj
Turn Off Delay Time 29 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Resistance 260mOhm
Terminal Finish Tin (Sn)
Voltage - Rated DC -20V
Terminal Position DUAL
Terminal Form GULL WING
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) 260
Current Rating -760mA
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 313mW
Turn On Delay Time 8 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 360m Ω @ 350mA, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 156pF @ 5V
Gate Charge (Qg) (Max) @ Vgs 2.1nC @ 4.5V
Rise Time 8.2ns
Drain to Source Voltage (Vdss) 20V
Vgs (Max) ±6V
Fall Time (Typ) 8.2 ns
Continuous Drain Current (ID) 760mA
Gate to Source Voltage (Vgs) 6V
Drain Current-Max (Abs) (ID) 0.76A
Drain to Source Breakdown Voltage -20V
Height 800μm
Length 1.6764mm
Width 950μm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Просмотр сходства

NTE4151PT1G Документы

NTE4151PT1G brand manufacturers: ON Semiconductor, Anli stock, NTE4151PT1G reference price.ON Semiconductor. NTE4151PT1G parameters, NTE4151PT1G Datasheet PDF and pin diagram description download.You can use the NTE4151PT1G Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find NTE4151PT1G pin diagram and circuit diagram and usage method of function,NTE4151PT1G electronics tutorials.You can download from the Anli.