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NTE4153NT1G Технические параметры

ON Semiconductor  NTE4153NT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case SC-89, SOT-490
Surface Mount YES
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 915mA Ta
Drive Voltage (Max Rds On, Min Rds On) 1.5V 4.5V
Number of Elements 1 Element
Power Dissipation (Max) 300mW Tj
Turn Off Delay Time 25 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Resistance 230MOhm
Terminal Finish Tin (Sn)
Voltage - Rated DC 20V
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Свойство продукта Значение свойства
Current Rating 915mA
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300mW
Turn On Delay Time 3.7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 230m Ω @ 600mA, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 110pF @ 16V
Gate Charge (Qg) (Max) @ Vgs 1.82nC @ 4.5V
Rise Time 4.4ns
Vgs (Max) ±6V
Fall Time (Typ) 4.4 ns
Continuous Drain Current (ID) 915mA
Threshold Voltage 760mV
Gate to Source Voltage (Vgs) 6V
Drain to Source Breakdown Voltage 20V
Nominal Vgs 760 mV
Height 800μm
Length 1.7mm
Width 950μm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

NTE4153NT1G Документы

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