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NTF3055L108T1G Технические параметры

ON Semiconductor  NTF3055L108T1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Factory Lead Time 11 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Surface Mount YES
Number of Pins 4Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 3A Ta
Drive Voltage (Max Rds On, Min Rds On) 5V
Number of Elements 1 Element
Power Dissipation (Max) 1.3W Ta
Turn Off Delay Time 22 ns
Operating Temperature -55°C~175°C TJ
Packaging Cut Tape (CT)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Resistance 120MOhm
Voltage - Rated DC 60V
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 3A
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 4
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.1W
Case Connection DRAIN
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 120m Ω @ 1.5A, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 440pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 15nC @ 5V
Rise Time 35ns
Vgs (Max) ±15V
Fall Time (Typ) 27 ns
Continuous Drain Current (ID) 3A
Threshold Voltage 1.68V
Gate to Source Voltage (Vgs) 15V
Drain Current-Max (Abs) (ID) 3A
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 9A
Nominal Vgs 1.68 V
Height 1.57mm
Length 6.5mm
Width 3.5mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

NTF3055L108T1G Документы

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