Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
ON Semiconductor NTGD3133PT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ON Semiconductor | |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 2 days ago) | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | |
| Number of Pins | 6Pins | |
| Transistor Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Turn Off Delay Time | 13.2 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2006 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| Max Power Dissipation | 560mW | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Pin Count | 6 | |
| Qualification Status | Not Qualified | |
| Element Configuration | Dual | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 1.1W | |
| FET Type | 2 P-Channel (Dual) | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 145m Ω @ 2.2A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.4V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 400pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 5.5nC @ 4.5V | |
| Rise Time | 12.7ns | |
| Drain to Source Voltage (Vdss) | 20V | |
| Polarity/Channel Type | N-CHANNEL | |
| Fall Time (Typ) | 12.7 ns | |
| Continuous Drain Current (ID) | 1.6A | |
| Gate to Source Voltage (Vgs) | 12V | |
| Drain Current-Max (Abs) (ID) | 2.5A | |
| Drain-source On Resistance-Max | 0.145Ohm | |
| Drain to Source Breakdown Voltage | -20V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Logic Level Gate | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |