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NTGD3133PT1G Технические параметры

ON Semiconductor  NTGD3133PT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка ON Semiconductor
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6Pins
Transistor Element Material SILICON
Number of Elements 2 Elements
Turn Off Delay Time 13.2 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 560mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Свойство продукта Значение свойства
Pin Count 6
Qualification Status Not Qualified
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.1W
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 145m Ω @ 2.2A, 4.5V
Vgs(th) (Max) @ Id 1.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 5.5nC @ 4.5V
Rise Time 12.7ns
Drain to Source Voltage (Vdss) 20V
Polarity/Channel Type N-CHANNEL
Fall Time (Typ) 12.7 ns
Continuous Drain Current (ID) 1.6A
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 2.5A
Drain-source On Resistance-Max 0.145Ohm
Drain to Source Breakdown Voltage -20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
RoHS Status RoHS Compliant
Lead Free Lead Free

NTGD3133PT1G Документы

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