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NTGD4161PT1G Технические параметры

ON Semiconductor  NTGD4161PT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка ON Semiconductor
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 day ago)
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Surface Mount YES
Number of Pins 6Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 1.5A
Number of Elements 2 Elements
Turn Off Delay Time 12.5 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2000
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 600mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
Qualification Status Not Qualified
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.1W
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 160m Ω @ 2.1A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 281pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 7.1nC @ 10V
Rise Time 9.2ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 9.2 ns
Continuous Drain Current (ID) -2.1A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 1.5A
Drain to Source Breakdown Voltage -30V
Pulsed Drain Current-Max (IDM) 10A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
RoHS Status RoHS Compliant
Lead Free Lead Free

NTGD4161PT1G Документы

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