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NTGS3136PT1G Технические параметры

ON Semiconductor  NTGS3136PT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Factory Lead Time 10 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case SOT-23-6
Surface Mount YES
Number of Pins 6Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 3.7A Ta
Drive Voltage (Max Rds On, Min Rds On) 1.8V 4.5V
Number of Elements 1 Element
Power Dissipation (Max) 700mW Ta
Turn Off Delay Time 99 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
Qualification Status Not Qualified
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.25W
Turn On Delay Time 9 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 33m Ω @ 5.1A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1901pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 29nC @ 4.5V
Rise Time 9ns
Vgs (Max) ±8V
Fall Time (Typ) 9 ns
Continuous Drain Current (ID) -5.1A
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 3.7A
Drain-source On Resistance-Max 0.033Ohm
Drain to Source Breakdown Voltage 20V
Height 1mm
Length 3.1mm
Width 1.7mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free

NTGS3136PT1G Документы

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