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NTGS3433T1G Технические параметры

ON Semiconductor  NTGS3433T1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Factory Lead Time 2 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case SOT-23-6
Surface Mount YES
Number of Pins 6Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 2.35A Ta
Drive Voltage (Max Rds On, Min Rds On) 2.5V 4.5V
Number of Elements 1 Element
Power Dissipation (Max) 500mW Ta
Turn Off Delay Time 110 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Voltage - Rated DC -12V
Terminal Position DUAL
Terminal Form GULL WING
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) 260
Current Rating -3.3A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 20 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 75m Ω @ 3.3A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 550pF @ 5V
Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V
Rise Time 20ns
Drain to Source Voltage (Vdss) 12V
Vgs (Max) ±8V
Fall Time (Typ) 100 ns
Continuous Drain Current (ID) 3.3A
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 2.35A
Drain-source On Resistance-Max 0.075Ohm
Drain to Source Breakdown Voltage -12V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

NTGS3433T1G Документы

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