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NTGS3446T1G Технические параметры

ON Semiconductor  NTGS3446T1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Factory Lead Time 4 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case SOT-23-6
Surface Mount YES
Number of Pins 6Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 2.5A Ta
Drive Voltage (Max Rds On, Min Rds On) 2.5V 4.5V
Number of Elements 1 Element
Power Dissipation (Max) 500mW Ta
Turn Off Delay Time 35 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Resistance 36MOhm
Voltage - Rated DC 20V
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Свойство продукта Значение свойства
Current Rating 5.1A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1W
Turn On Delay Time 9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 45m Ω @ 5.1A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 750pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V
Rise Time 12ns
Vgs (Max) ±12V
Fall Time (Typ) 12 ns
Continuous Drain Current (ID) 5.1A
Threshold Voltage 850mV
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 2.5A
Drain to Source Breakdown Voltage 20V
Nominal Vgs 850 mV
Height 1mm
Length 3.1mm
Width 1.7mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

NTGS3446T1G Документы

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