[email protected]

Локаль

Язык

  • English
  • русский

Валюта

  • CNY-¥
  • RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
Классификация Марка Марка О Anli Запрос цены
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
[email protected]

NTHD3102CT1G Технические параметры

ON Semiconductor  NTHD3102CT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 7 Weeks
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Surface Mount YES
Number of Pins 8Pins
Weight 4.535924g
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 4A 3.1A
Number of Elements 2 Elements
Turn Off Delay Time 15.7 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 20V
Max Power Dissipation 600mW
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Current Rating 5.5A
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number NTHD3102C
Pin Count 8
Свойство продукта Значение свойства
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 600mW
Turn On Delay Time 7.2 ns
Power - Max 1.1W
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 45m Ω @ 4.4A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 510pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 7.9nC @ 4.5V
Rise Time 16.9ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 16.9 ns
Continuous Drain Current (ID) 5.5A
Threshold Voltage 400mV
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 4A
Drain-source On Resistance-Max 0.045Ohm
Drain to Source Breakdown Voltage -20V
Pulsed Drain Current-Max (IDM) 16A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 1.1mm
Length 3.1mm
Width 1.7mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Просмотр сходства

NTHD3102CT1G Документы

NTHD3102CT1G brand manufacturers: ON Semiconductor, Anli stock, NTHD3102CT1G reference price.ON Semiconductor. NTHD3102CT1G parameters, NTHD3102CT1G Datasheet PDF and pin diagram description download.You can use the NTHD3102CT1G Transistors - FETs, MOSFETs - Arrays, DSP Datesheet PDF, find NTHD3102CT1G pin diagram and circuit diagram and usage method of function,NTHD3102CT1G electronics tutorials.You can download from the Anli.