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NTHD4102PT1G Технические параметры

ON Semiconductor  NTHD4102PT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 8 hours ago)
Factory Lead Time 7 Weeks
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Surface Mount YES
Number of Pins 8Pins
Weight 4.535924g
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 2.9A
Number of Elements 2 Elements
Turn Off Delay Time 32 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2000
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Resistance 64MOhm
Terminal Finish Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
Voltage - Rated DC -20V
Max Power Dissipation 1.1W
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Current Rating -7.3A
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number NTHD4102P
Pin Count 8
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.1W
Turn On Delay Time 5.5 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 80m Ω @ 2.9A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 750pF @ 16V
Gate Charge (Qg) (Max) @ Vgs 8.6nC @ 4.5V
Rise Time 12ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 12 ns
Continuous Drain Current (ID) 4.1A
Threshold Voltage -1.5V
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs -1.5 V
Height 1.1mm
Length 3.1mm
Width 1.7mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

NTHD4102PT1G Документы

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