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NTHS2101PT1G Технические параметры

ON Semiconductor  NTHS2101PT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка ON Semiconductor
Lifecycle Status LAST SHIPMENTS (Last Updated: 14 hours ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 5.4A Tj
Drive Voltage (Max Rds On, Min Rds On) 1.8V 4.5V
Number of Elements 1 Element
Power Dissipation (Max) 1.3W Ta
Turn Off Delay Time 73 ns
Packaging Tape & Reel (TR)
Published 2004
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
Voltage - Rated DC -8V
Terminal Position DUAL
Свойство продукта Значение свойства
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Current Rating -5.4A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.3W
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 25m Ω @ 5.4A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 6.4V
Gate Charge (Qg) (Max) @ Vgs 30nC @ 4.5V
Rise Time 28ns
Vgs (Max) ±8V
Fall Time (Typ) 28 ns
Continuous Drain Current (ID) 7.5A
Gate to Source Voltage (Vgs) 8V
Drain-source On Resistance-Max 0.025Ohm
Drain to Source Breakdown Voltage -8V
Nominal Vgs -450 mV
RoHS Status RoHS Compliant
Lead Free Lead Free

NTHS2101PT1G Документы

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