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NTJD1155LT1G Технические параметры

ON Semiconductor  NTJD1155LT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 20 hours ago)
Factory Lead Time 15 Weeks
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Surface Mount YES
Number of Pins 6Pins
Transistor Element Material SILICON
Number of Elements 2 Elements
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Resistance 130mOhm
Terminal Finish Tin (Sn)
Max Power Dissipation 400mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 630mA
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number NTJD1155
Pin Count 6
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 400mW
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 175m Ω @ 1.2A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Drain to Source Voltage (Vdss) 8V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Continuous Drain Current (ID) 1.3A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 1V
Drain to Source Breakdown Voltage -8V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Height 1mm
Length 2.2mm
Width 1.35mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

NTJD1155LT1G Документы

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