[email protected]

Локаль

Язык

  • English
  • русский

Валюта

  • CNY-¥
  • RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
Классификация Марка Марка О Anli Запрос цены
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
[email protected]

NTJD4105CT2 Технические параметры

ON Semiconductor  NTJD4105CT2 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка ON Semiconductor
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Surface Mount YES
Number of Pins 6Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 630mA 775mA
Number of Elements 2 Elements
Turn Off Delay Time 50 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code 8541.21.00.95
Max Power Dissipation 270mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating 630mA
Time@Peak Reflow Temperature-Max (s) 30
Свойство продукта Значение свойства
Base Part Number NTJD4105C
Pin Count 6
Qualification Status Not Qualified
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 270mW
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 375m Ω @ 630mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 46pF @ 20V
Gate Charge (Qg) (Max) @ Vgs 3nC @ 4.5V
Rise Time 23ns
Drain to Source Voltage (Vdss) 20V 8V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 36 ns
Continuous Drain Current (ID) 775mA
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 1.1A
Drain-source On Resistance-Max 0.375Ohm
Drain to Source Breakdown Voltage -8V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Feedback Cap-Max (Crss) 5 pF
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Просмотр сходства

NTJD4105CT2 Документы

NTJD4105CT2 brand manufacturers: ON Semiconductor, Anli stock, NTJD4105CT2 reference price.ON Semiconductor. NTJD4105CT2 parameters, NTJD4105CT2 Datasheet PDF and pin diagram description download.You can use the NTJD4105CT2 Transistors - FETs, MOSFETs - Arrays, DSP Datesheet PDF, find NTJD4105CT2 pin diagram and circuit diagram and usage method of function,NTJD4105CT2 electronics tutorials.You can download from the Anli.