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NTJD4152PT1G Технические параметры

ON Semiconductor  NTJD4152PT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 23 hours ago)
Factory Lead Time 11 Weeks
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Surface Mount YES
Number of Pins 6Pins
Transistor Element Material SILICON
Number of Elements 2 Elements
Turn Off Delay Time 13.5 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2000
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Resistance 215MOhm
Terminal Finish Tin (Sn)
Voltage - Rated DC -20V
Max Power Dissipation 272mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -880mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number NTJD4152P
Свойство продукта Значение свойства
Pin Count 6
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 272mW
Turn On Delay Time 5.8 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 260m Ω @ 880mA, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 155pF @ 20V
Gate Charge (Qg) (Max) @ Vgs 2.2nC @ 4.5V
Rise Time 6.5ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 6.5 ns
Continuous Drain Current (ID) 880mA
Threshold Voltage -1.2V
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 0.88A
Drain to Source Breakdown Voltage -20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 990.6μm
Length 2.1844mm
Width 1.3462mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

NTJD4152PT1G Документы

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