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ON Semiconductor NTJD4152PT2G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Свойство продукта | Значение свойства | |
---|---|---|
Классификация | Transistors - FETs, MOSFETs - Arrays | |
Марка | ON Semiconductor | |
Factory Lead Time | 11 Weeks | |
Mounting Type | Surface Mount | |
Package / Case | 6-TSSOP, SC-88, SOT-363 | |
Surface Mount | YES | |
Transistor Element Material | SILICON | |
Number of Elements | 2 Elements | |
Operating Temperature | -55°C~150°C TJ | |
Packaging | Tape & Reel (TR) | |
Published | 2015 | |
JESD-609 Code | e3 | |
Part Status | Active | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Number of Terminations | 6Terminations | |
ECCN Code | EAR99 | |
Terminal Finish | Tin (Sn) | |
Max Power Dissipation | 272mW | |
Terminal Form | GULL WING | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Свойство продукта | Значение свойства | |
---|---|---|
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
JESD-30 Code | R-PDSO-G6 | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | |
Operating Mode | ENHANCEMENT MODE | |
Power - Max | 272mW | |
FET Type | 2 P-Channel (Dual) | |
Transistor Application | SWITCHING | |
Rds On (Max) @ Id, Vgs | 260m Ω @ 880mA, 4.5V | |
Vgs(th) (Max) @ Id | 1.2V @ 250μA | |
Input Capacitance (Ciss) (Max) @ Vds | 155pF @ 20V | |
Gate Charge (Qg) (Max) @ Vgs | 2.2nC @ 4.5V | |
Drain to Source Voltage (Vdss) | 20V | |
Continuous Drain Current (ID) | 880mA | |
Drain Current-Max (Abs) (ID) | 0.88A | |
Drain-source On Resistance-Max | 0.26Ohm | |
DS Breakdown Voltage-Min | 20V | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
FET Feature | Standard | |
RoHS Status | ROHS3 Compliant |