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NTJD4158CT2G Технические параметры
ON Semiconductor NTJD4158CT2G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ON Semiconductor | |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 3 days ago) | |
| Factory Lead Time | 5 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-TSSOP, SC-88, SOT-363 | |
| Surface Mount | YES | |
| Number of Pins | 6Pins | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 250mA 880mA | |
| Number of Elements | 2 Elements | |
| Turn Off Delay Time | 13.5 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2009 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| Max Power Dissipation | 270mW | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Base Part Number | NTJD4158C | |
| Pin Count | 6 | |
| Qualification Status | Not Qualified | |
| Element Configuration | Dual | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 270mW | |
| FET Type | N and P-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 1.5 Ω @ 10mA, 4.5V | |
| Vgs(th) (Max) @ Id | 1.5V @ 100μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 33pF @ 5V | |
| Gate Charge (Qg) (Max) @ Vgs | 1.5nC @ 5V | |
| Rise Time | 6.5ns | |
| Drain to Source Voltage (Vdss) | 30V 20V | |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
| Fall Time (Typ) | 6.5 ns | |
| Continuous Drain Current (ID) | 880mA | |
| Gate to Source Voltage (Vgs) | 12V | |
| Drain Current-Max (Abs) (ID) | 0.25A | |
| Drain-source On Resistance-Max | 2.5Ohm | |
| Drain to Source Breakdown Voltage | -20V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Logic Level Gate | |
| Feedback Cap-Max (Crss) | 12 pF | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
NTJD4158CT2G Документы
- DatasheetsNTJD4158C
- PCN Obsolescence/ EOLMultiple Devices 27/Jan/2012 Mult Dev EOL 17/Apr/2019
- ReachStatementON-Semiconductor-company-79.pdf
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