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NTJD5121NT1G Технические параметры

ON Semiconductor  NTJD5121NT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 16 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Surface Mount YES
Number of Pins 6Pins
Transistor Element Material SILICON
Number of Elements 2 Elements
Turn Off Delay Time 34 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Resistance 1.6Ohm
Additional Feature LOW THRESHOLD
Max Power Dissipation 266mW
Terminal Form GULL WING
Base Part Number NTJD5121N
Pin Count 6
Element Configuration Dual
Свойство продукта Значение свойства
Operating Mode ENHANCEMENT MODE
Power Dissipation 250W
Turn On Delay Time 22 ns
Power - Max 250mW
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.6 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 26pF @ 20V
Gate Charge (Qg) (Max) @ Vgs 0.9nC @ 4.5V
Rise Time 34ns
Drain to Source Voltage (Vdss) 60V
Fall Time (Typ) 32 ns
Continuous Drain Current (ID) 295mA
Threshold Voltage 1.7V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 1.7 V
Height 1mm
Length 2.2mm
Width 1.35mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

NTJD5121NT1G Документы

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