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NTK3139PT1G Технические параметры

ON Semiconductor  NTK3139PT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Factory Lead Time 7 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case SOT-723
Surface Mount YES
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 660mA Ta
Drive Voltage (Max Rds On, Min Rds On) 1.5V 4.5V
Number of Elements 1 Element
Power Dissipation (Max) 310mW Ta
Turn Off Delay Time 32.7 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination SMD/SMT
ECCN Code EAR99
Resistance 380mOhm
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 310mW
Turn On Delay Time 9 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 480m Ω @ 780mA, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 170pF @ 16V
Rise Time 5.8ns
Drain to Source Voltage (Vdss) 20V
Vgs (Max) ±6V
Fall Time (Typ) 5.8 ns
Continuous Drain Current (ID) 780mA
Threshold Voltage -1.2V
Gate to Source Voltage (Vgs) 6V
Drain Current-Max (Abs) (ID) 0.78A
Drain to Source Breakdown Voltage -20V
Dual Supply Voltage -20V
Height 550μm
Length 1.25mm
Width 850μm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

NTK3139PT1G Документы

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