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NTLGD3502NT2G Технические параметры

ON Semiconductor  NTLGD3502NT2G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка ON Semiconductor
Lifecycle Status LIFETIME (Last Updated: 1 day ago)
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case 6-VDFN Exposed Pad
Surface Mount YES
Number of Pins 6Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 4.3A 3.6A
Number of Elements 2 Elements
Turn Off Delay Time 8.6 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
Resistance 60MOhm
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Max Power Dissipation 1.74W
Peak Reflow Temperature (Cel) 260
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number NTLGD3502N
Pin Count 6
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.74W
Case Connection DRAIN
Turn On Delay Time 7 ns
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 60m Ω @ 4.3A, 4.5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 480pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 4nC @ 4.5V
Rise Time 17.5ns
Fall Time (Typ) 17.5 ns
Continuous Drain Current (ID) 5.8A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 4.3A
Drain to Source Breakdown Voltage 20V
Pulsed Drain Current-Max (IDM) 17.2A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

NTLGD3502NT2G Документы

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