[email protected]

Локаль

Язык

  • English
  • русский

Валюта

  • CNY-¥
  • RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
Классификация Марка Марка О Anli Запрос цены
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
[email protected]

NTLJD3115PTAG Технические параметры

ON Semiconductor  NTLJD3115PTAG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка ON Semiconductor
Lifecycle Status LAST SHIPMENTS (Last Updated: 4 days ago)
Mounting Type Surface Mount
Package / Case 6-WDFN Exposed Pad
Surface Mount YES
Number of Pins 6Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 2.3A
Number of Elements 2 Elements
Turn Off Delay Time 19.8 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
Max Power Dissipation 710mW
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Свойство продукта Значение свойства
Base Part Number NTLJD3115P
Pin Count 6
Qualification Status Not Qualified
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.5W
Case Connection DRAIN
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 100m Ω @ 2A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 531pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 6.2nC @ 4.5V
Rise Time 15ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 15 ns
Continuous Drain Current (ID) -4.1A
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 2.3A
Drain-source On Resistance-Max 0.135Ohm
Drain to Source Breakdown Voltage -20V
Pulsed Drain Current-Max (IDM) 20A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
RoHS Status RoHS Compliant
Lead Free Lead Free
Просмотр сходства

NTLJD3115PTAG Документы

NTLJD3115PTAG brand manufacturers: ON Semiconductor, Anli stock, NTLJD3115PTAG reference price.ON Semiconductor. NTLJD3115PTAG parameters, NTLJD3115PTAG Datasheet PDF and pin diagram description download.You can use the NTLJD3115PTAG Transistors - FETs, MOSFETs - Arrays, DSP Datesheet PDF, find NTLJD3115PTAG pin diagram and circuit diagram and usage method of function,NTLJD3115PTAG electronics tutorials.You can download from the Anli.