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NTLJD3119CTAG Технические параметры

ON Semiconductor  NTLJD3119CTAG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка ON Semiconductor
Lifecycle Status LAST SHIPMENTS (Last Updated: 6 days ago)
Mounting Type Surface Mount
Package / Case 6-WDFN Exposed Pad
Surface Mount YES
Number of Pins 6Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 2.6A 2.3A
Number of Elements 2 Elements
Turn Off Delay Time 13.7 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series µCool™
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 710mW
Base Part Number NTLJD3119C
Pin Count 6
Свойство продукта Значение свойства
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 710mW
FET Type N and P-Channel
Rds On (Max) @ Id, Vgs 65m Ω @ 3.8A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 271pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 3.7nC @ 4.5V
Rise Time 13.2ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 13.2 ns
Continuous Drain Current (ID) 4.6A
Threshold Voltage 700mV
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 3.8A
Drain to Source Breakdown Voltage -20V
Pulsed Drain Current-Max (IDM) 18A
Dual Supply Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 700 mV
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

NTLJD3119CTAG Документы

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