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NTLJD3119CTBG Технические параметры

ON Semiconductor  NTLJD3119CTBG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка ON Semiconductor
Factory Lead Time 9 Weeks
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Package / Case 6-WDFN Exposed Pad
Surface Mount YES
Mounting Type Surface Mount
Contact Plating Tin
Number of Pins 6Pins
Transistor Element Material SILICON
Turn Off Delay Time 13.7 ns
Number of Elements 2 Elements
Current - Continuous Drain (Id) @ 25℃ 2.6A 2.3A
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series µCool™
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Max Power Dissipation 710mW
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number NTLJD3119C
Pin Count 6
Element Configuration Dual
Свойство продукта Значение свойства
Operating Mode ENHANCEMENT MODE
Power Dissipation 710mW
Turn On Delay Time 5.2 ns
FET Type N and P-Channel
Rds On (Max) @ Id, Vgs 65m Ω @ 3.8A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 271pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 3.7nC @ 4.5V
Rise Time 13.2ns
Drain to Source Voltage (Vdss) 20V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 13.2 ns
Continuous Drain Current (ID) 4.6A
Threshold Voltage 700mV
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 3.8A
Drain to Source Breakdown Voltage -20V
Pulsed Drain Current-Max (IDM) 18A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 700 mV
Width 2mm
Length 2mm
Height 750μm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

NTLJD3119CTBG Документы

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