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NTLJD4116NT1G Технические параметры

ON Semiconductor  NTLJD4116NT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Factory Lead Time 6 Weeks
Mounting Type Surface Mount
Package / Case 6-WDFN Exposed Pad
Surface Mount YES
Number of Pins 6Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 2.5A
Number of Elements 2 Elements
Turn Off Delay Time 14.2 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
Voltage - Rated DC 30V
Max Power Dissipation 710mW
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Current Rating 4.6A
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.5W
Case Connection DRAIN
Turn On Delay Time 4.8 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 70m Ω @ 2A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 427pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 6.5nC @ 4.5V
Rise Time 11.8ns
Fall Time (Typ) 11.8 ns
Continuous Drain Current (ID) 3.7A
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 3A
Drain-source On Resistance-Max 0.09Ohm
Drain to Source Breakdown Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 750μm
Length 2mm
Width 2mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

NTLJD4116NT1G Документы

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