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NTLJF3117PT1G Технические параметры
ON Semiconductor NTLJF3117PT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ON Semiconductor | |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) | |
| Factory Lead Time | 2 Weeks | |
| Contact Plating | Tin | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-WDFN Exposed Pad | |
| Surface Mount | YES | |
| Number of Pins | 6Pins | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 2.3A Ta | |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V 4.5V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 710mW Ta | |
| Turn Off Delay Time | 19.8 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | µCool™ | |
| Published | 2006 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| ECCN Code | EAR99 | |
| Terminal Position | DUAL | |
| Terminal Form | C BEND | |
| Peak Reflow Temperature (Cel) | 260 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Pin Count | 6 | |
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 1.5W | |
| Turn On Delay Time | 5.2 ns | |
| FET Type | P-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 100m Ω @ 2A, 4.5V | |
| Vgs(th) (Max) @ Id | 1V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 531pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 6.2nC @ 4.5V | |
| Rise Time | 15ns | |
| Drain to Source Voltage (Vdss) | 20V | |
| Vgs (Max) | ±8V | |
| Fall Time (Typ) | 15 ns | |
| Continuous Drain Current (ID) | -3.3A | |
| Gate to Source Voltage (Vgs) | 8V | |
| Drain Current-Max (Abs) (ID) | 2.3A | |
| Drain to Source Breakdown Voltage | -20V | |
| Pulsed Drain Current-Max (IDM) | 20A | |
| FET Feature | Schottky Diode (Isolated) | |
| Height | 750μm | |
| Length | 2mm | |
| Width | 2mm | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
Индекс :
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