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NTLJS1102PTAG Технические параметры

ON Semiconductor  NTLJS1102PTAG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка ON Semiconductor
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-WDFN Exposed Pad
Number of Pins 6Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 3.7A Ta
Drive Voltage (Max Rds On, Min Rds On) 1.2V 4.5V
Number of Elements 1 Element
Power Dissipation (Max) 700mW Ta
Turn Off Delay Time 80 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Position DUAL
Свойство продукта Значение свойства
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 6
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.3W
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 36m Ω @ 6.2A, 4.5V
Vgs(th) (Max) @ Id 720mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1585pF @ 4V
Gate Charge (Qg) (Max) @ Vgs 25nC @ 4.5V
Rise Time 41ns
Drain to Source Voltage (Vdss) 8V
Vgs (Max) ±6V
Fall Time (Typ) 70 ns
Continuous Drain Current (ID) 3.7A
Gate to Source Voltage (Vgs) 6V
Drain to Source Breakdown Voltage -8V
RoHS Status RoHS Compliant
Lead Free Lead Free

NTLJS1102PTAG Документы

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