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NTLJS3113PT1G Технические параметры

ON Semiconductor  NTLJS3113PT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 17 hours ago)
Factory Lead Time 2 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case 6-WDFN Exposed Pad
Surface Mount YES
Number of Pins 6Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 3.5A Ta
Drive Voltage (Max Rds On, Min Rds On) 1.5V 4.5V
Number of Elements 1 Element
Power Dissipation (Max) 700mW Ta
Turn Off Delay Time 60 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series µCool™
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Resistance 40MOhm
Additional Feature LOGIC LEVEL COMPATIBLE
Voltage - Rated DC -20V
Terminal Position DUAL
Terminal Form C BEND
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) 260
Current Rating -7.7A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.9W
Case Connection DRAIN
Turn On Delay Time 6.9 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 40m Ω @ 3A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1329pF @ 16V
Gate Charge (Qg) (Max) @ Vgs 15.7nC @ 4.5V
Rise Time 17.5ns
Vgs (Max) ±8V
Fall Time (Typ) 17.5 ns
Continuous Drain Current (ID) -5.8A
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 3.5A
Drain to Source Breakdown Voltage 20V
Pulsed Drain Current-Max (IDM) 23A
Height 750μm
Length 2mm
Width 2mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

NTLJS3113PT1G Документы

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