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NTLJS4114NT1G Технические параметры

ON Semiconductor  NTLJS4114NT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Factory Lead Time 9 Weeks
Mounting Type Surface Mount
Package / Case 6-WDFN Exposed Pad
Surface Mount YES
Number of Pins 6Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 3.6A Ta
Drive Voltage (Max Rds On, Min Rds On) 1.8V 4.5V
Number of Elements 1 Element
Power Dissipation (Max) 700mW Ta
Turn Off Delay Time 20 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series µCool™
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Resistance 35MOhm
Terminal Finish Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 700mW
Case Connection DRAIN
Turn On Delay Time 5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 35m Ω @ 2A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 650pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 13nC @ 4.5V
Rise Time 9ns
Vgs (Max) ±12V
Fall Time (Typ) 9 ns
Continuous Drain Current (ID) 7.8A
Threshold Voltage 550mV
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 28A
Nominal Vgs 550 mV
Height 750μm
Length 2mm
Width 2mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

NTLJS4114NT1G Документы

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