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NTLTD7900ZR2G Технические параметры

ON Semiconductor  NTLTD7900ZR2G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка ON Semiconductor
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Package / Case 8-VDFN Exposed Pad
Mounting Type Surface Mount
Mount Surface Mount
Number of Pins 8Pins
Transistor Element Material SILICON
Turn Off Delay Time 1.87 ns
Number of Elements 2 Elements
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature ESD PROTECTED
Voltage - Rated DC 20V
Max Power Dissipation 1.5W
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 260
Current Rating 9A
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number NTLTD7900Z
Pin Count 8
Qualification Status Not Qualified
Configuration COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.5W
Case Connection DRAIN
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 26m Ω @ 6.5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 15pF @ 16V
Gate Charge (Qg) (Max) @ Vgs 18nC @ 4.5V
Rise Time 1.17ns
Fall Time (Typ) 1.17 ns
Continuous Drain Current (ID) 6A
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 6A
Drain-source On Resistance-Max 0.026Ohm
Drain to Source Breakdown Voltage 20V
Pulsed Drain Current-Max (IDM) 30A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
RoHS Status RoHS Compliant
Lead Free Lead Free

NTLTD7900ZR2G Документы

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