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ON Semiconductor NTMD2P01R2G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ON Semiconductor | |
| Lifecycle Status | OBSOLETE (Last Updated: 1 week ago) | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) | |
| Number of Pins | 8Pins | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 2.3A | |
| Number of Elements | 2 Elements | |
| Turn Off Delay Time | 33 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2006 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 8Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Voltage - Rated DC | -16V | |
| Max Power Dissipation | 710mW | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Current Rating | -2.3A | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Pin Count | 8 | |
| Qualification Status | Not Qualified | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 2W | |
| FET Type | 2 P-Channel (Dual) | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 100m Ω @ 2.4A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.5V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 750pF @ 16V | |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 4.5V | |
| Rise Time | 35ns | |
| Drain to Source Voltage (Vdss) | 16V | |
| Fall Time (Typ) | 29 ns | |
| Continuous Drain Current (ID) | -3.85A | |
| Gate to Source Voltage (Vgs) | 10V | |
| Drain-source On Resistance-Max | 0.1Ohm | |
| Drain to Source Breakdown Voltage | -16V | |
| Pulsed Drain Current-Max (IDM) | 9A | |
| Avalanche Energy Rating (Eas) | 350 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Logic Level Gate | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |