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NTMD3P03R2G Технические параметры

ON Semiconductor  NTMD3P03R2G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Factory Lead Time 6 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 2.34A
Number of Elements 2 Elements
Turn Off Delay Time 45 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Resistance 85MOhm
Additional Feature AVALANCHE RATED
Voltage - Rated DC -30V
Max Power Dissipation 2W
Terminal Form GULL WING
Current Rating -3.05A
Base Part Number NTMD3P03
Свойство продукта Значение свойства
Pin Count 8
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 16 ns
Power - Max 730mW
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 85m Ω @ 3.05A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 750pF @ 24V
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Rise Time 16ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 45 ns
Continuous Drain Current (ID) -3.05A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs -1.7 V
Feedback Cap-Max (Crss) 135 pF
Height 1.5mm
Length 5mm
Width 4mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

NTMD3P03R2G Документы

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