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NTMD4820NR2G Технические параметры

ON Semiconductor  NTMD4820NR2G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка ON Semiconductor
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Contact Plating Tin
Surface Mount YES
Package / Case 8-SOIC (0.154, 3.90mm Width)
Mounting Type Surface Mount
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 4.9A
Turn Off Delay Time 21 ns
Number of Elements 1 Element
Published 2007
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Max Power Dissipation 1.29W
Terminal Form GULL WING
Base Part Number NTMD4820N
Pin Count 8
Свойство продукта Значение свойства
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.28W
Turn On Delay Time 9.4 ns
Power - Max 750mW
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 20m Ω @ 7.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 940pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 7.7nC @ 4.5V
Rise Time 4ns
Fall Time (Typ) 4 ns
Continuous Drain Current (ID) 6.4A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 4.9A
Drain-source On Resistance-Max 0.02Ohm
Drain to Source Breakdown Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Width 4mm
Length 5mm
Height 1.5mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

NTMD4820NR2G Документы

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