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NTMD4N03R2G Технические параметры

ON Semiconductor  NTMD4N03R2G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Factory Lead Time 36 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface Mount YES
Number of Pins 8Pins
Transistor Element Material SILICON
Number of Elements 2 Elements
Turn Off Delay Time 16 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Resistance 48MOhm
Voltage - Rated DC 30V
Max Power Dissipation 2W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 4A
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number NTMD4N03
Pin Count 8
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 7 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 60m Ω @ 4A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 20V
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Rise Time 14ns
Fall Time (Typ) 10 ns
Continuous Drain Current (ID) 4A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 4A
Drain to Source Breakdown Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 1.5mm
Length 5mm
Width 4mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

NTMD4N03R2G Документы

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