
Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
ON Semiconductor NTMD6N02R2G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Свойство продукта | Значение свойства | |
---|---|---|
Классификация | Transistors - FETs, MOSFETs - Arrays | |
Марка | ON Semiconductor | |
Lifecycle Status | ACTIVE (Last Updated: 1 day ago) | |
Factory Lead Time | 45 Weeks | |
Contact Plating | Tin | |
Mounting Type | Surface Mount | |
Package / Case | 8-SOIC (0.154, 3.90mm Width) | |
Surface Mount | YES | |
Number of Pins | 8Pins | |
Transistor Element Material | SILICON | |
Current - Continuous Drain (Id) @ 25℃ | 3.92A | |
Number of Elements | 2 Elements | |
Turn Off Delay Time | 45 ns | |
Operating Temperature | -55°C~150°C TJ | |
Packaging | Tape & Reel (TR) | |
Published | 2004 | |
JESD-609 Code | e3 | |
Pbfree Code | yes | |
Part Status | Active | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Number of Terminations | 8Terminations | |
ECCN Code | EAR99 | |
Resistance | 35MOhm | |
Additional Feature | LOGIC LEVEL COMPATIBLE | |
Voltage - Rated DC | 20V | |
Max Power Dissipation | 2W | |
Terminal Form | GULL WING | |
Peak Reflow Temperature (Cel) | 260 | |
Current Rating | 6A | |
Time@Peak Reflow Temperature-Max (s) | 40 |
Свойство продукта | Значение свойства | |
---|---|---|
Base Part Number | NTMD6N02 | |
Pin Count | 8 | |
Element Configuration | Dual | |
Operating Mode | ENHANCEMENT MODE | |
Power Dissipation | 2W | |
Turn On Delay Time | 12 ns | |
Power - Max | 730mW | |
FET Type | 2 N-Channel (Dual) | |
Transistor Application | SWITCHING | |
Rds On (Max) @ Id, Vgs | 35m Ω @ 6A, 4.5V | |
Vgs(th) (Max) @ Id | 1.2V @ 250μA | |
Input Capacitance (Ciss) (Max) @ Vds | 1100pF @ 16V | |
Gate Charge (Qg) (Max) @ Vgs | 20nC @ 4.5V | |
Rise Time | 50ns | |
Fall Time (Typ) | 80 ns | |
Continuous Drain Current (ID) | 6.5A | |
Gate to Source Voltage (Vgs) | 12V | |
Drain to Source Breakdown Voltage | 20V | |
Pulsed Drain Current-Max (IDM) | 30A | |
Avalanche Energy Rating (Eas) | 360 mJ | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
FET Feature | Logic Level Gate | |
Nominal Vgs | 900 mV | |
Height | 1.5mm | |
Length | 5mm | |
Width | 4mm | |
REACH SVHC | No SVHC | |
Radiation Hardening | No | |
RoHS Status | ROHS3 Compliant | |
Lead Free | Lead Free |