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NTMD6P02R2 Технические параметры
ON SEMICONDUCTOR NTMD6P02R2 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ||
| Factory Lead Time | [object Object] | |
| Surface Mount | YES | |
| Number of Terminals | 8Terminals | |
| Transistor Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Operating Temperature (Max.) | 150°C | |
| JESD-609 Code | e0 | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Additional Feature | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 240 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Reach Compliance Code | not_compliant | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Pin Count | 8 | |
| JESD-30 Code | R-PDSO-G8 | |
| Qualification Status | Not Qualified | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | P-CHANNEL | |
| Drain Current-Max (Abs) (ID) | 4.8A | |
| Drain-source On Resistance-Max | 0.033Ohm | |
| DS Breakdown Voltage-Min | 20V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 0.75W | |
| Feedback Cap-Max (Crss) | 450 pF | |
| RoHS Status | Non-RoHS Compliant |
NTMD6P02R2 Документы
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