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NTMD6P02R2G Технические параметры
ON Semiconductor NTMD6P02R2G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ON Semiconductor | |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) | |
| Factory Lead Time | 29 Weeks | |
| Contact Plating | Tin | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) | |
| Surface Mount | YES | |
| Number of Pins | 8Pins | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 4.8A | |
| Number of Elements | 2 Elements | |
| Turn Off Delay Time | 85 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2007 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 8Terminations | |
| ECCN Code | EAR99 | |
| Resistance | 33mOhm | |
| Additional Feature | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | |
| Voltage - Rated DC | -20V | |
| Max Power Dissipation | 750mW | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Current Rating | -6A | |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Base Part Number | NTMD6P02 | |
| Pin Count | 8 | |
| Number of Outputs | 1Output | |
| Max Output Current | 6A | |
| Element Configuration | Dual | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 2W | |
| FET Type | 2 P-Channel (Dual) | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 33m Ω @ 6.2A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.2V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 1700pF @ 16V | |
| Gate Charge (Qg) (Max) @ Vgs | 35nC @ 4.5V | |
| Rise Time | 20ns | |
| Drain to Source Voltage (Vdss) | 20V | |
| Fall Time (Typ) | 50 ns | |
| Continuous Drain Current (ID) | 7.8A | |
| Threshold Voltage | -880mV | |
| Gate to Source Voltage (Vgs) | 12V | |
| Drain to Source Breakdown Voltage | -20V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Logic Level Gate | |
| Feedback Cap-Max (Crss) | 450 pF | |
| Height | 1.5mm | |
| Length | 5mm | |
| Width | 4mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
Индекс :
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