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NTMFS4108NT3G Технические параметры

ON Semiconductor  NTMFS4108NT3G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка ON Semiconductor
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 weeks ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN, 5 Leads
Number of Pins 5Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 13.5A Ta
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 1.1W Ta 96.2W Tc
Turn Off Delay Time 70 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 30V
Terminal Position DUAL
Terminal Form FLAT
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) 260
Current Rating 22A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 5
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.4W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.2m Ω @ 21A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6000pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 54nC @ 4.5V
Rise Time 60ns
Vgs (Max) ±20V
Fall Time (Typ) 140 ns
Continuous Drain Current (ID) 35A
Gate to Source Voltage (Vgs) 12V
Drain-source On Resistance-Max 0.0022Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 203A
RoHS Status RoHS Compliant
Lead Free Lead Free

NTMFS4108NT3G Документы

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