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NTMFS4849NT1G Технические параметры

ON Semiconductor  NTMFS4849NT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка ON Semiconductor
Lifecycle Status LAST SHIPMENTS (Last Updated: 22 hours ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN, 5 Leads
Number of Pins 5Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 10.2A Ta 71A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 11.5V
Number of Elements 1 Element
Power Dissipation (Max) 870mW Ta 42.4W Tc
Turn Off Delay Time 18.2 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Position DUAL
Terminal Form FLAT
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 5
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 5.7W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.1m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2040pF @ 12V
Gate Charge (Qg) (Max) @ Vgs 22nC @ 4.5V
Rise Time 45.1ns
Vgs (Max) ±16V
Fall Time (Typ) 5.7 ns
Continuous Drain Current (ID) 16.1A
Gate to Source Voltage (Vgs) 16V
Drain Current-Max (Abs) (ID) 100A
Drain-source On Resistance-Max 0.0079Ohm
Drain to Source Breakdown Voltage 30V
RoHS Status RoHS Compliant
Lead Free Lead Free

NTMFS4849NT1G Документы

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