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NTMS5P02R2G Технические параметры

ON Semiconductor  NTMS5P02R2G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Factory Lead Time 38 Weeks
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface Mount YES
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 3.95A Ta
Drive Voltage (Max Rds On, Min Rds On) 2.5V 4.5V
Number of Elements 1 Element
Power Dissipation (Max) 790mW Ta
Turn Off Delay Time 70 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Resistance 26MOhm
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED
Voltage - Rated DC -20V
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Свойство продукта Значение свойства
Current Rating -5.4A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 22 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 33m Ω @ 5.4A, 4.5V
Vgs(th) (Max) @ Id 1.25V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 16V
Gate Charge (Qg) (Max) @ Vgs 35nC @ 4.5V
Rise Time 25ns
Drain to Source Voltage (Vdss) 20V
Vgs (Max) ±10V
Fall Time (Typ) 55 ns
Continuous Drain Current (ID) 5.4A
Gate to Source Voltage (Vgs) 10V
Drain Current-Max (Abs) (ID) 3.95A
Drain to Source Breakdown Voltage -20V
Nominal Vgs -900 mV
Height 1.5mm
Length 5mm
Width 4mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

NTMS5P02R2G Документы

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