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NTMYS3D3N06CLTWG Технические параметры
ON Semiconductor NTMYS3D3N06CLTWG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ON Semiconductor | |
| Factory Lead Time | 33 Weeks | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | LFPAK4 (5x6) | |
| Current - Continuous Drain (Id) @ 25℃ | 26A Ta 133A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V 10V | |
| Power Dissipation (Max) | 3.9W Ta 100W Tc | |
| Operating Temperature | -55°C~175°C TJ | |
| Packaging | Tape & Reel (TR) | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Terminal Finish | Tin (Sn) | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | not_compliant | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 3m Ω @ 50A, 10V | |
| Vgs(th) (Max) @ Id | 2V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 2880pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 40.7nC @ 10V | |
| Drain to Source Voltage (Vdss) | 60V | |
| Vgs (Max) | ±20V | |
| RoHS Status | ROHS3 Compliant |
NTMYS3D3N06CLTWG Документы
- Environmental InformationMaterial Declaration NTMYS3D3N06CLTWG
- Datasheets
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